InGaN-Channel Heterostructure Field Effect Transistor With Double Recessed Gate for Improved RF Performance

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911QX-06-C-0086
Agency Tracking Number: A043-048-2682
Amount: $729,791.00
Phase: Phase II
Program: SBIR
Awards Year: 2006
Solicitation Year: 2004
Solicitation Topic Code: A04-048
Solicitation Number: 2004.3
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Thomas Katona
 R & D Program Manager
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
Sensor Electronic Technology Inc. proposes to develop a new epitaxial layer design with ternary (InGaN) and quaternary (AlInGaN) stop etch layers for double recess device fabrication. We already demonstrated significant improvement in the RF performance of AlGaN/InGaN/AlGaN/GaN-based HFETs with the recessed gate design. We used our novel Migration Enhanced MOCVD (MEMOCVDTM) deposition technique to incorporate a very thin (2 nm) InGaN layer into the AlGaN barrier. The InGaN layer was used as a stop-etch layer for RIE etching and selective wet chemical etching was used to remove the InGaN stop-etch layer using two proprietary etch processes. We propose to combine this approach with our novel AlGaN/AlInGaN/InGaN/GaN based Triple HFET (THFET) design. A quaternary AlInGaN cap layer grown over the InGaN channel will be used as a second stop etch layer for the RIE. We will recess both source and drain contacts and will fabricate them on the In-containing AlInGaN cap layer for reduced contact resistance. The expected benefits of the proposed design are higher gain and breakdown voltage, better linearity of the RF devices and suppression of current dispersion. We will also use our MOSHFET gate dielectric process to achieve superior device reliability and stability for transition to commercialization.

* Information listed above is at the time of submission. *

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