High Power Microwave Limiters based on GaN Technology

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,758.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
N00024-05-C-4110
Award Id:
70233
Agency Tracking Number:
N042-162-0649
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
ThomasKatona
Research Scientist
(803) 647-9757
tkatona@s-et.com
Business Contact:
RemisGaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
We propose to develop power limiter based on Schottky diodes over AlGaN/GaN structure. The limiters would have the capability to integrate with AlGaN/GaN transistors, which is a good candidate for next-generation power amplifiers. The microwave noise behavior of GaN-based transistors is also similar to the best GaAs transistors. Thus, the power limiters together with GaN-based LNA will serve as a robust receiver which can be put close to the high-power amplifiers. GaN material systems have been under intense investigation in the last ten years due to its high breakdown field and high temperature operation. GaN transistors operating up to 600C is available in reports from various researchers. The devices and circuits will prove their potential for modern military demand of high power microwave limiters.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government