High Power Microwave Limiters based on GaN Technology

Award Information
Agency:
Department of Defense
Amount:
$69,758.00
Program:
SBIR
Contract:
N00024-05-C-4110
Solitcitation Year:
2004
Solicitation Number:
2004.2
Branch:
Navy
Award Year:
2004
Phase:
Phase I
Agency Tracking Number:
N042-162-0649
Solicitation Topic Code:
N04-162
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
135907686
Principal Investigator
 Thomas Katona
 Research Scientist
 (803) 647-9757
 tkatona@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to develop power limiter based on Schottky diodes over AlGaN/GaN structure. The limiters would have the capability to integrate with AlGaN/GaN transistors, which is a good candidate for next-generation power amplifiers. The microwave noise behavior of GaN-based transistors is also similar to the best GaAs transistors. Thus, the power limiters together with GaN-based LNA will serve as a robust receiver which can be put close to the high-power amplifiers. GaN material systems have been under intense investigation in the last ten years due to its high breakdown field and high temperature operation. GaN transistors operating up to 600C is available in reports from various researchers. The devices and circuits will prove their potential for modern military demand of high power microwave limiters.

* information listed above is at the time of submission.

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