High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-06-C-0066
Agency Tracking Number: 03SB1-0447
Amount: $749,919.00
Phase: Phase II
Program: SBIR
Awards Year: 2005
Solicitation Year: 2003
Solicitation Topic Code: MDA03-034
Solicitation Number: 2003.1
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Thomas Katona
 R & D Program Manager
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the channel. The result is a variation of the device threshold voltage along the channel that makes the electric field along the channel much more uniform and might roughly double the average electron velocity in the channel. The conventional approach for improving the performance of GaN HEMTs involves field plates that work by introducing a metal gate extension over a dielectric. The gate extension splits the high field region under the gate (typically at the drain side of the gate) between two high field regions rather than one, reducing the maximum field. This results in (a) increase in the breakdown voltage and (b) improved device reliability. Although the field plate approach reduces the maximum electric field under the gate, the additional capacitance and corresponding velocity profile limit high frequency operation for these devices. We propose a radically different approach for pushing the GaN HEMT performance above the 200 GHz range.

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