Novel GaN-Based HFET Sources and Amplifiers for Millimeter-Wave Applications

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-05-C-0089
Agency Tracking Number: A054-008-0432
Amount: $99,976.00
Phase: Phase I
Program: STTR
Awards Year: 2005
Solicitation Year: 2005
Solicitation Topic Code: A05-T008
Solicitation Number: N/A
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Thomas Katona
 R & D Program Manager
 (803) 647-9757
 tkatona@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
 RENSELLAER POLYTECHNIC INSTITUTE
 Michael Shur
 110 8th Street, ECSE Dept. CII 9017
Troy, NY, 12180
 (518) 276-2201
 Nonprofit college or university
Abstract
We propose to develop GaN HFET based sources with enhanced RF operation characteristics at millimeter wave frequencies and beyond by utilizing combination of our novel plasma wave approach and newly observed electron-transit-time effects. Electron-transit-time effects in the saturation regime of HFETs might lead to the plasma wave instability which decrease the plasma wave decay and, hence, emission of radiation at millimeter and sub-THz frequencies. Our proposed solution is based on the "plasma wave approach" which was developed by Dyakonov and Shur in early 90s and recently confirmed by several experimental observations. We have demonstrated that, in many cases, the two dimensional electrons in the FET channel may be described by hydrodynamic equations which coincide with those for shallow water, plasma waves in the FET channel being similar to shallow water waves. We also showed that in a short enough device, an instability should occur at a relatively small direct current because of spontaneous plasma wave generation. This provides a new mechanism for the emission of tunable millimeter wave radiation.

* information listed above is at the time of submission.

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