Gradually buffered, delta-doped AlGaN/GaN/AlGaN Heterostructure Field-Effect Transistors

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,867.00
Award Year:
2005
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-05-C-7205
Agency Tracking Number:
044-1577
Solicitation Year:
2004
Solicitation Topic Code:
MDA04-111
Solicitation Number:
2004.4
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Qhalid Fareed
Senior Growth Engineer
(803) 647-9757
fareed@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
New structure GaN-based field effect transistors (FETs) are proposed to solve the problem. A composition graded buffer, aiming at eliminating dislocations arising from hetero-epitaxy interface and suppressing channel electrons spillover under negative gate bias, a Si-delta-doped GaN layer just below the two-dimensional electron gas (2DEG) channel, used for polarization fields screening as well as carrier supplier, are the major innovations of the new structure. We propose to use a composition-graded AlGaN transition layer in-between the AlN buffer and the GaN layer. This carefully designed transition layer will be insulating and can gradually accommodate the lattice mismatch between AlN and GaN, eliminating/alleviating the dislocation generation. The piled-up polarization fields, which could deplete the 2DEG channel, will be taken care of by inserting a Si-delta-doping layer in the vicinity to the channel. Simulations will be done to guide experiments and find out the interactions among the composition grading, polarization fields and Si-delta-doping (concentration and position).

* information listed above is at the time of submission.

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