Gradually buffered, delta-doped AlGaN/GaN/AlGaN Heterostructure Field-Effect Transistors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-05-C-7205
Agency Tracking Number: 044-1577
Amount: $99,867.00
Phase: Phase I
Program: SBIR
Awards Year: 2005
Solicitation Year: 2004
Solicitation Topic Code: MDA04-111
Solicitation Number: 2004.4
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Qhalid Fareed
 Senior Growth Engineer
 (803) 647-9757
 fareed@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
New structure GaN-based field effect transistors (FETs) are proposed to solve the problem. A composition graded buffer, aiming at eliminating dislocations arising from hetero-epitaxy interface and suppressing channel electrons spillover under negative gate bias, a Si-delta-doped GaN layer just below the two-dimensional electron gas (2DEG) channel, used for polarization fields screening as well as carrier supplier, are the major innovations of the new structure. We propose to use a composition-graded AlGaN transition layer in-between the AlN buffer and the GaN layer. This carefully designed transition layer will be insulating and can gradually accommodate the lattice mismatch between AlN and GaN, eliminating/alleviating the dislocation generation. The piled-up polarization fields, which could deplete the 2DEG channel, will be taken care of by inserting a Si-delta-doping layer in the vicinity to the channel. Simulations will be done to guide experiments and find out the interactions among the composition grading, polarization fields and Si-delta-doping (concentration and position).

* Information listed above is at the time of submission. *

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