Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,958.00
Award Year:
2007
Program:
SBIR
Phase:
Phase I
Contract:
N00039-08-C-0068
Award Id:
82871
Agency Tracking Number:
N072-147-0525
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Nezih Pala
Research Scientist
(803) 647-9757
pala@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institute:
n/a
Abstract
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly designed III-Nitride HFET - based RF switches will actually improve at cryogenic temperatures. These include insertion loss, maximum switching powers, switching times and others.

* information listed above is at the time of submission.

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