Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00039-08-C-0068
Agency Tracking Number: N072-147-0525
Amount: $99,885.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2007
Solicitation Topic Code: N07-147
Solicitation Number: 2007.2
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Nezih Pala
 Research Scientist
 (803) 647-9757
 pala@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
N/A
Abstract
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly designed III-Nitride HFET - based RF switches will actually improve at cryogenic temperatures. These include insertion loss, maximum switching powers, switching times and others.

* Information listed above is at the time of submission. *

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