High-Power Integrated Radio Frequency (RF) Switches for Joint Tactical Radio Systems (JTRS)

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,986.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
W15P7T-08-C-P035
Agency Tracking Number:
A081-007-0073
Solicitation Year:
2008
Solicitation Topic Code:
A08-007
Solicitation Number:
2008.1
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Remis Gaaska
President and CEO
(803) 647-9757
gaska@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
The proposal calls for development of novel type of RF switches for JTRS using patented III-Nitride insulated gate heterostructure field-effect transistors (MOSHFETs). III-Nitride MOSHFETs are excellent candidates for high-power RF stages of JTRS. They possess the highest power densities, highest operating temperatures and best robustness amongst other solid-state devices. The proposers’ team has demonstrated superior performance of monolithically integrated RF switches using MOSHFETs. In the course of proposed work, integrated SPDT and SP4T RF switches meeting the JTRS requirements for insertion loss less than 0.2 dB and switching powers exceeding +46 dBm will be developed.

* information listed above is at the time of submission.

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