SBIR Phase I: Deep UV LED with High Quality p-AlInGaN Layers by Digital Doping Control

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0839492
Agency Tracking Number: 0839492
Amount: $137,331.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: N/A
Solicitation Topic Code: EL
Solicitation Number: NSF 08-548
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Rd, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Max Shatalov
 (803) 647-9757
Business Contact
 Max Shatalov
Title: PhD
Phone: (803) 647-9757
Research Institution
This Small Business Innovation Research Project will develop next generation high power deep ultraviolet light emitting diodes with high quality p-type AlInGaN layers with digital doping control. Advancements in AlInGaN material system and device technology have resulted in commercially viable UV light emitting diodes (LEDs) operating in the spectral region from 240 nm to 365 nm. This innovative technology is positioned to create new applications that were previously unattainable due to the inherent limitations of existing UV lamps or lasers. Primary markets include water/air disinfection, bio-medical and analytical instrumentation, fluorescence sensing, ink curing, and phototherapy.

* information listed above is at the time of submission.

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