FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices
National Aeronautics and Space Administration
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Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC
1195 Atlas Road, Columbia, SC, 29209-2531
Socially and Economically Disadvantaged:
AbstractSETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip. The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG (commonly known as field-effect transistors) respond to the incoming FIR radiation due to the rectification of radiation induced oscillations of electron density (electron plasma). Phase I of the project will be devoted to the development, design, and characterization of the single pixel, consisting of an array of field-effect transistors, targeting at responsivity increase of 100 times, and demonstrating the technical feasibility of 10^10 cm Hz^0.5/W detectivity.
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