FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX09CF26P
Agency Tracking Number: 084660
Amount: $99,980.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: S1.04
Solicitation Number: N/A
Small Business Information
1195 Atlas Road, Columbia, SC, 29209-2531
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jianyu Deng
 Principal Investigator
 (803) 647-9757
 deng@s-et.com
Business Contact
 Jianyu Deng
Title: Business Official
Phone: (803) 647-9757
Email: deng@s-et.com
Research Institution
N/A
Abstract
SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip. The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG (commonly known as field-effect transistors) respond to the incoming FIR radiation due to the rectification of radiation induced oscillations of electron density (electron plasma). Phase I of the project will be devoted to the development, design, and characterization of the single pixel, consisting of an array of field-effect transistors, targeting at responsivity increase of 100 times, and demonstrating the technical feasibility of 10^10 cm Hz^0.5/W detectivity.

* Information listed above is at the time of submission. *

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