FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,980.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
NNX09CF26P
Agency Tracking Number:
084660
Solicitation Year:
2008
Solicitation Topic Code:
S1.04
Solicitation Number:
n/a
Small Business Information
SENSOR ELECTRONIC TECHNOLOGY, INC
1195 Atlas Road, Columbia, SC, 29209-2531
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Jianyu Deng
Principal Investigator
(803) 647-9757
deng@s-et.com
Business Contact:
Jianyu Deng
Business Official
(803) 647-9757
deng@s-et.com
Research Institution:
n/a
Abstract
SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip. The active detector elements will be submicron gated channels with 2 dimensional electron gas (2DEG). The devices with gated 2DEG (commonly known as field-effect transistors) respond to the incoming FIR radiation due to the rectification of radiation induced oscillations of electron density (electron plasma). Phase I of the project will be devoted to the development, design, and characterization of the single pixel, consisting of an array of field-effect transistors, targeting at responsivity increase of 100 times, and demonstrating the technical feasibility of 10^10 cm Hz^0.5/W detectivity.

* information listed above is at the time of submission.

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