Normally-OFF AlInGaN MOSHFET for power converters

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$69,882.00
Award Year:
2009
Program:
STTR
Phase:
Phase I
Contract:
N00014-09-M-0340
Agency Tracking Number:
N09A-023-0436
Solicitation Year:
2009
Solicitation Topic Code:
N09-T023
Solicitation Number:
2009.A
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Jianyu Deng
Research Scientist
(803) 647-9757
deng@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
University of South Carolina
Grigory Simin
Swearingen Engineering Center
301 South Main Street, Rm 3A80
Columbia, SC, 29208
(803) 777-0986
Nonprofit college or university
Abstract
We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching frequencies. It is also the best wide bandgap device type that allows for stable and reliable operation at required high voltage and current levels.

* information listed above is at the time of submission.

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