Normally-OFF AlInGaN MOSHFET for power converters

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-09-M-0340
Agency Tracking Number: N09A-023-0436
Amount: $69,882.00
Phase: Phase I
Program: STTR
Awards Year: 2009
Solicitation Year: 2009
Solicitation Topic Code: N09-T023
Solicitation Number: 2009.A
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jianyu Deng
 Research Scientist
 (803) 647-9757
 deng@s-et.com
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Email: gaska@s-et.com
Research Institution
 University of South Carolina
 Grigory Simin
 Swearingen Engineering Center
301 South Main Street, Rm 3A80
Columbia, SC, 29208
 (803) 777-0986
 Nonprofit college or university
Abstract
We propose to develop and commercialize novel normally-off III-Nitride insulated gate heterostructure field effect transistor (MOSHFET) for power converters. Based on our experience in high power insulated gate III-N HFET development, we strongly believe that this device is the most promising for achieving the best combination of low ON-resistance, high operating voltage and high switching frequencies. It is also the best wide bandgap device type that allows for stable and reliable operation at required high voltage and current levels.

* Information listed above is at the time of submission. *

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