AlInN/GaN heterostructures for X-band RF power amplification

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,408.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-09-C-0108
Agency Tracking Number:
B083-024-0520
Solicitation Year:
2008
Solicitation Topic Code:
MDA08-024
Solicitation Number:
2008.3
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Jinwei Yang
Research Scientist
(803) 647-9757
jinwei@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
SETI proposes to develop and commercialize innovative technology for AlInN/GaN heterostructure growth and metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) fabrication for the high power X-band operation. Our technical approach is based on the proprietary and patented MEMOCVD® growth technology which allows for high quality III-Nitride epitaxial material deposition at reduced temperatures required for In incorporation. Novel epitaxial structure design will be combined with our patented MOSHFET technology and patent-pending five-terminal transistor design to reduce the gate leakage, eliminate current collapse and suppress the ¡°spread¡± of the gate region toward the drain under high drain bias in order to demonstrate stable high-power performance at X-band frequency.

* information listed above is at the time of submission.

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