Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$299,836.00
Award Year:
2009
Program:
SBIR
Phase:
Phase II
Contract:
N66001-09-C-0084
Award Id:
82871
Agency Tracking Number:
N072-147-0525
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1195 Atlas Road, Columbia, SC, 29209
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Jianyu Deng
Research Scientist
(803) 647-9757
deng@s-et.com
Business Contact:
REmis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
n/a
Abstract
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface, III-Nitride HFET - based RF switches offer low insertion loss, lower than that of pin diodes and quite comparable to that achievable with MEMS switches. As compared to MEMS and other switch types, III-N HFET switches have much higher switching powers, shorter switching times, excellent temperature stability. Importantly, the HFET performance is expected to actually improve at cryogenic temperatures.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government