A Reliable Aluminum Nitride High Temperature Electronic Package for High Power Devices

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$729,266.00
Award Year:
2006
Program:
SBIR
Phase:
Phase II
Contract:
W31P4Q-06-C-0500
Award Id:
78569
Agency Tracking Number:
A052-140-3695
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
19501 144th Avenue NE, Woodinville, WA, 98072
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
015577190
Principal Investigator:
EnderSavrun
President
(425) 485-7272
ender.savrun@siennatech.com
Business Contact:
CananSavrun
Vice President
(425) 485-7272
canan.savrun@siennatech.com
Research Institute:
n/a
Abstract
In the Phase I program Sienna Technologies, Inc. has successfully developed (i) a low temperature die attach process that is capable of operating over 400ºC, (ii) wire bondable gold and silver thick film metallizations on AlN substrates, (iii) high temperature stable wire bonds, and (iv) an all AlN single chip module. Based on the success in the Phase I program Sienna Technologies, Inc. proposes to develop AlN based multichip modules that will facilitate the operation of high power GaN and SiC devices at temperatures greater than 300ºC. We will design and assemble a multichip power module, i.e., a 1000 W power inverter capable of operating at 300ºC in an AlN monolithic package, which can operate at temperatures greater than 300ºC using the assembly processes and materials that were developed in Phase I.

* information listed above is at the time of submission.

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