A LOW-COST MINIATURE VOID SENSOR

Award Information
Agency:
Department of Defense
Branch:
Army
Amount:
$49,522.00
Award Year:
1987
Program:
SBIR
Phase:
Phase I
Contract:
N/A
Agency Tracking Number:
6417
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Silicon Designs Inc
1445 Nw Mall St, Issaquah, WA, 98027
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
N/A
Principal Investigator
 JOHN C COLE
 (206) 391-8329
Business Contact
Phone: () -
Research Institution
N/A
Abstract
MECHANICAL G-SWITCHES ARE PRESENTLY AVAILABLE THAT SENSE WHEN THE ACCELERATION EXCEEDS A SPECIFIED VALUE. CONTACT RESISTANCE IS A PROBLEM EVEN WITH NEWLY FABRICATED MECHANICAL G-SWITCHES. MECHANICAL CONTACTS ARE ALSO SUBJECT TO SWITCH BOUNCE AND DAMAGE DURING THE INITIAL SHOCK OF IMPACT. SILICON DESIGNS HAS DEVELOPED A PROCESS FOR BUILDING MICROMECHANICAL SENSE ELEMENTS ON THE SURFACE OF A SILICON WAFER THAT CONTAINS SENSING CIRCUITRY FABRICATED WITH STANDARD INTEGRATED CIRCUIT (IC) TECHNOLOGY. THIS ALLOWS THE LARGE QUANTITY PRODUCTION OF ACCELEROMETERS WITH SOPHISTICATED ACCOMPANYING ELECTRONICS AT A LOW COST. EACH TRANSDUCER CHIP IS THEN PACKAGED MUCH LIKE STANDARD ICS. SENSE ELEMENTS CAN BE DESIGNED FOR A WIDE RANGE OF ACCELERATIONS. HIGH RELIABILITY, LOW-COST G-SWITCHES CAN BE BUILT WITH THIS TECHNOLOGY THAT DO NOT RELY ON METAL-TO-METAL CONTACTS. IN ADDITION, EACH SENSOR CAN BE INDIVIDUALLY CALIBRATED AFTER FABRICATION, RESULTING IN HIGH PRODUCTION YIELDS. WE ANTICIPATE THAT ELECTRONIC G-SWITCHES CAN BE MANUFACTURED USING THIS TECHNOLOGY IN HIGH VOLUMES FOR LESS THAN $5 EACH, POSSIBLY IN THE $2-3 RANGE, DEPENDING ON THE TEST REQUIREMENTS.

* information listed above is at the time of submission.

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