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A Two-Dimensional Avalanche Photodiode Array Suitable for Near IR LADAR

Award Information
Agency: Department of Defense
Branch: Office of the Secretary of Defense
Contract: N/A
Agency Tracking Number: 32678
Amount: $54,732.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1996
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
2864 South Circle Drive Suite 900
Colorado Springs, CO 80906
United States
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David W. Gardner
 (719) 576-4800
Business Contact
Phone: () -
Research Institution

SMD proposes the design and fabrication of a two-dimensional APD array. A novel APD array is proposed which requires low bias voltages, thus making it compatible with both CMOS and CCD multiplexer designs. The on-chip CMOS/CCD circuitry will allow for multiplexing of a large number of pixels to a single output. Further, each pixel in the APD array will have its own range detection circuitry allowing for time-of-flight measurements on a pixel by pixel basis for potentially very large arrays. Quantum efficiency of the APD array will be enhanced in the infrared range through the deposition of a unique coating on the surface of the silicon. When the coating is exposed to infrared radiation, a visible orange secondary emission is observed. Thus, the coating converts infrared energy into a wavelength more compatible with silicon APD detection. The combination of the novel low voltage APD design with the wavelength converting coating will result in a new generation of high performance APD arrays. Under Phase I, SMD proposes to experimentally demonstrate key components of the proposed concept Phase II will result in a fieldable 25x25 APD array with on-chip range detection circuitry and enhanced IR sensitivity.

* Information listed above is at the time of submission. *

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