Structured Copper: A Potential Solution for Manufacturing High Power Converter Systems
Small Business Information
Silicon Power Corp. (Currently Silicon Power Corporation)
175 Great Valley Parkway, Malvern, PA, 19355
Dr. Rik De Donker
AbstractWe propose the development of a very-high-voltage, large area MOS Turn-Off Thyristor (MTO) to replace the Gate Turn-Off Thyristor (GTO) in high power converter systems ranging from 1 to 20 MVA. Because a GTO rated to turn off 2000 A typically requires a turn-off current of 800 A, the most unreliable feature in GTO applications is the gate circuit that provides this high current turn-off pulse. The MTO incorporates the main features of proven GTO technology to achieve the highest available voltage, current, and thermal stability. However, the MTO incorporates a high impedance turn-off gate structure based on an MOS transistor which allows for a much smaller, lower cost, and potentially much more reliable gate circuit. Furthermore, the turn-on gate of the GTO can be preserved in the MTO or, optionally, it can be replaced by a buried gate structure for faster operation. SPCO has already demonstrated a 6kV / 1200 A hybrid version of the MTO. The integrated MTO, which will provide the highest system reliability, requires that an MOS transistor be fabricated directly on high-voltage device wafers. This necessitates further detailed simulation and design efforts for both the device physical properties and for its fabrications processes.
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