Structured Copper: A Potential Solution for Manufacturing High Power

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$1,905,251.00
Award Year:
1997
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
36675
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Silicon Power Corp.
175 Great Valley Pkwy, Malvern, PA, 19355
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Dr. Rik De Doncker
(610) 251-7377
Business Contact:
() -
Research Institution:
n/a
Abstract
Reliable and efficient heat removal from silicon high power semiconductor devices is a major technical challenge. SPCO owns key technology which offers a highly reliable method of heat removal which causes virtually no material fatigue of the semiconductor or the bonding materials. This proposed bonding technique is based on longitudinally pliable direct-bonded structured copper. This technology allows encapsulation of multiple high power devices in a double side cooled module, very similar to medium power single side cooled IGBT module. The structured copper bonding technique offers at a temperature variation of 40C a life well above 15 million cycles while existing module bonding techniques under the same conditions barely reach 0.5 million cycles. Through the concept has been proven with diodes and SCRs, no work was performed on GTOs or MTOs. Additionally, a sizable work still needs to be done for process improvement before it becomes technically feasible for manufacturing. Phase I study is aimed at establishing eh optimum process and to investigate issues relating the use of structured copper with free-floating silicon devices and devices with large interdigitated structures. Applicability of this process to medium power IGBT or MCT modules will also be investigated.

* information listed above is at the time of submission.

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