Rad Effects in Semiconductor Electronics
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3620 Lost Creek Boulevard, Austin, TX, 78735
AbstractSilicon Space Technology and team member ATK Mission Research, along with Jazz Semiconductor, propose to demonstrate a comprehensive methodology for TCAD simulation using leading-edge Synopsys tools. These tools are capable of 3-D process and device simulation, enabling Mixed-Mode simulations studies of radiation particles with silicon devices and their response to the circuit. We will collaborate with Jazz Semiconductor to calibrate their CA18 CMOS process in 2-D and 3-D simulations. We will predict and describe accurately the transistor device performance to variations in channel size and/or to the process. Calibrated Mixed-Mode simulations will be more accurate in describing the results of single event effects. Given the availability of silicon foundry bulk CMOS technology, it would be advantageous if a comprehensive modeling approach based on the actual foundry process were available to predict or quantify its radiation sensitivity. We propose to demonstrate this is possible using commercially available process and device simulation tools that can be combined with SPICE simulation tools to perform Mixed-Mode simulations. The Mixed-Mode simulation methodology can then be embedded within the fabric of a commercially available TCAD modeling environment tool and used to quantify and predict the radiation sensitivity of the foundry process.
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