Radiation Hardening Designs and Techniques for Missile Defense (Process)

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-07-C-0118
Agency Tracking Number: B063-043-0474
Amount: $99,997.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2006
Solicitation Topic Code: MDA06-043
Solicitation Number: 2006.3
Small Business Information
3620 Lost Creek Boulevard, Austin, TX, 78735
DUNS: 147671957
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Wesley Morris
 (512) 891-9702
Business Contact
 Jon Gwin
Title: COO
Phone: (210) 822-9706
Email: jgwin@siliconspacetech.com
Research Institution
Silicon Space Technology (SST) has solved the major space radiation problems, Single-Event Effects and Total Ionizing Dose, by combining substrate engineering with layout design innovation. Working with Texas Instruments (TI) to enable radiation hardening of TI’s 130nm commercial CMOS process (C035), SST’s radiation-hardening (RH) process innovations, previously demonstrated at 180nm, will be scaled and integrated into this process. SST will perform this work by relying heavily on process and device finite-element (or TCAD) simulation. SST will first build the baseline process model to develop the integration approach for inserting the RH process modules into the C035 130nm process. The TCAD model will be calibrated to process measurements and to electrical characteristics of the C035 transistors provided by TI. Using the calibrated TCAD model as a baseline, the simulations will be varied to develop the new RH 130nm process and to quantify any process interactions, constraints or yield limiting factors, especially in the context of circuit ground rules, SPICE models and photolithographic imaging.

* information listed above is at the time of submission.

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