Space Qualified SDRAM Memory

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-08-M-0015
Agency Tracking Number: F073-097-0394
Amount: $99,998.00
Phase: Phase I
Program: SBIR
Awards Year: 2008
Solicitation Year: 2007
Solicitation Topic Code: AF073-097
Solicitation Number: 2007.3
Small Business Information
3620 Lost Creek Boulevard, Austin, TX, 78735
DUNS: 147671957
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Bob Fuller
 Senior Scientist
 (804) 550-3938
Business Contact
 Jon Gwin
Title: Vice President
Phone: (210) 822-9706
Research Institution
Silicon Space Technology (SST), working with Texas Instruments (TI), proposes to demonstrate an innovative approach for manufacturing radiation hardened (RH) high-density SDRAM¡¯s for space applications by adding two proprietary RH modules plus a simple stacked capacitor structure to TI¡¯s baseline 130nm process flow. SST has solved the major space radiation problems, Single-Event Effects (SEE), Total Ionizing Dose (TID) & Dose Rate (DR), by combining process modifications and layout design innovation. Our proven-in-silicon approach enables production of radiation-hardened integrated circuits at leading-edge circuit densities within any commercial silicon foundry, for use in both terrestrial and space systems. Sequences of radiation tests have shown SST¡¯s Buried Guard Ring (BGR) significantly improves SEE performance (e.g., SEL, SET, & SEU). BGR also significantly improves Dose Rate performance by >23x higher than non-BGR protected circuits. SST¡¯s Parasitic Isolation Device (PID) structures have shown complete TID immunity to > 1Mrad. These methods do not adversely affect either circuit performance or yield. The simple stacked capacitor will be based on structures previously used by mainstream DRAM manufacturers. While this will not result in state of the art DRAM densities, it will enable manufacture of much denser RH memories than currently available.

* Information listed above is at the time of submission. *

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