Nanoporous Silica Slurry for Enhanced CMP of Low Power Consumption Copper Interconnects

Award Information
Agency:
Department of Energy
Amount:
$99,843.00
Program:
SBIR
Contract:
DE-FG02-05ER84255
Solitcitation Year:
2005
Solicitation Number:
DE-FG01-04ER04-33
Branch:
N/A
Award Year:
2005
Phase:
Phase I
Agency Tracking Number:
79522S05-I
Solicitation Topic Code:
20 d
Small Business Information
Sinmat, Inc.
2153 SE Hawthorne Road, GTEC Center, Suite 106, Gainesville, FL, 32641
Hubzone Owned:
N
Woman Owned:
Y
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Deepika Singh
 Dr.
 (352) 334-7237
 singh@sinmat.com
Business Contact
 Deepika Singh
Title: Dr.
Phone: (352) 334-7237
Email: singh@sinmat.com
Research Institution
N/A
Abstract
79522S In the manufacture of semiconductor interconnects, the copper Chemical Mechanical Planarization (CMP) process uses a slurry composed of large, hard particles that cause defects such as scratches, and delamination of the copper film from the low- k-dielectric-constant matter. To overcome these deficiencies, this project will develop technology for introducing nanoporous silica particles into the slurry, which would reduce the hardness of silica particles, increase stability in the slurry, reducing the scratches. The resulting porous-silica-formulated slurries would have lower defectivity and delamination free polishing compared to their nonporous counterparts. Phase I will synthesize nanoporous silica particles, formulate slurries, conduct CMP experiments, and measure CMP performance. In Phase II, integrated testing will be conducted on copper/ultra-low-k dielectrics. Commercial Applications and Other Benefits as described by the awardee: The market for copper slurry is expected to be $300 million by 2008 out of a total CMP market of $600 million. The nanoparticle technology should lead to fewer slurry defects, providing increased yield and lower energy consumption.

* information listed above is at the time of submission.

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