Rapid,Single Atomic Step Mechano-chemical Polishing (MCP) of Silicon Carbide Wafers

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,999.00
Award Year:
2005
Program:
STTR
Phase:
Phase I
Contract:
HQ0006-05-C-7280
Agency Tracking Number:
05-0136T
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Sinmat, Inc.
2153 Hawthorne Road, GTEC Center, Suite 106, Gainesville, FL, 32641
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
024935517
Principal Investigator:
Rajiv Singh
Professor
(352) 392-1032
rsing@mse.ufl.edu
Business Contact:
Deepika Singh
President
(352) 334-7237
singh@sinmat.com
Research Institution:
UNIV. OF FLORIDA
Rajiv Singh
Department of Materials Engr, Rhines Hall
Gainesville, FL, 32611
(352) 392-1032
Nonprofit college or university
Abstract
Presently one of the outstanding challenges for rapid commercialization of SiC based device technology for high power/high frequency electronics is the affordable, volume production of damage-free, epi-ready 100 mm SiC wafers that exhibit single atomic steps (terraces). Sinmat Inc. in partnership with wafer manufacturers and the University of Florida propose to further develop a novel gentle mechano-chemical polishing (MCP) process for production of clean, epi-ready SiC wafers with atomic terraces. The MCP process is a unique sub-set of the chemical mechanical polishing (CMP) process and is characterized by the use of soft chemically active particles to induce oxidation of silicon carbide surfaces under appropriate chemical conditions. Furthermore, the relatively soft particles remove the film layer without damage to the underlying substrate. Initial experiments on polishing of silicon carbide have yielded extremely promising results. The PI for this project is Rajiv Singh (from the University of Florida and co-founder of Sinmat Inc), who is internationally recognized for his contributions in the CMP of electronic materials.

* information listed above is at the time of submission.

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