Rapid Atomic Level, Mechano Chemical Polishing of Silicon Carbide Substrates

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$750,000.00
Award Year:
2006
Program:
STTR
Phase:
Phase II
Contract:
HQ0006-06-C-7382
Award Id:
74803
Agency Tracking Number:
05-0136T
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2153 Hawthorne Road, Gainesville, FL, 32641
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
024935517
Principal Investigator:
RajivSingh
Professor
(352) 392-1032
rsing@mse.ufl.edu
Business Contact:
DeepikaSingh
President
(352) 334-7237
singh@sinmat.com
Research Institute:
UNIV. OF FLORIDA
Roslyn Oleson
Materials Science Rhines Hall
Gainesville, FL, 32611
(352) 392-9447
Nonprofit college or university
Abstract
Currently one of the outstanding challenges is the affordable, volume production of epi-ready, 100 mm SiC wafers that are scratch-free and have atomic-scale surface finish. As SiC is relatively chemically inert and mechanically hard, aggressive polishing methods involving very hard particles have been used to achieve high removal rates, but such methods create a high degree of sub-surface damage and scratches. Sinmat Inc. working together with the University of Florida will develop an industrially robust and low cost mechano-chemical polishing (MCP) method for production of epi-ready, 100mm SiC wafers in a rapid and reliable manner. By achieving excellent surface finish at rapid removal rates and low slurry and process costs, Sinmat estimates that the final polishing costs can be reduced by more than 80% over existing planarization methods, while enhancing the surface finish over existing processes. This STTR project is also in close partnership with two market leading companies who will supply the SiC wafers, grow GaN films on polished wafers, fabricate power devices, conduct evaluation and benchmark the results relative to current industry state of the art and provide timely data feedback to enable rapid process development and commercialization of the MCP process.

* information listed above is at the time of submission.

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