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Novel Rapid and Low Damage Mechanical Polishing Method for Low Cost and Volume Manufacturing of 100mm SiC Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-07-C-7767
Agency Tracking Number: B063-035-0771
Amount: $99,976.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA06-035
Solicitation Number: 2006.3
Solicitation Year: 2006
Award Year: 2007
Award Start Date (Proposal Award Date): 2007-03-21
Award End Date (Contract End Date): 2007-09-21
Small Business Information
2153 Hawthorne Road GTEC Center, Suite 129, Box2
Gainesville, FL 32641
United States
DUNS: 024935517
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Deepika Singh
 (352) 334-7237
Business Contact
 Deepika Singh
Title: President
Phone: (352) 334-7237
Research Institution

The extremely long and multiple polishing steps represent one of the critical challenges for affordable, volume production of high quality 100 mm SiC wafers. As SiC is relatively chemically inert and mechanically hard, aggressive polishing methods involving very hard particles have been used to achieve high removal rates, but such methods create a high degree of sub-surface damage and scratches. To significantly reduce the manufacturing costs, novel high removal rate and low sub-surface mechanical polishing processes need to be developed. Sinmat proposes to develop a novel mechanical polishing process based on novel nanoparticles that will significantly enhance polishing rates, while at the same time reducing the sub-surface damage. These nanoparticles are expected to combine high hardness with “chemical tooth” capability to achieve high removal rates with low concomitant surface damage. The successful development of such as process is expected to significantly shorten the chemical mechanical planarization (CMP) step and related manufacturing costs. In the Phase I of the SBIR project, feasibility studies will be conducted on small substrates, while in the Phase II this process will be extended to 100 mm silicon carbide substrates.

* Information listed above is at the time of submission. *

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