SBIR Phase I: Novel Slurry for Direct Shallow Trench Isolation (STI) Planarization Process for Sub-50 nm Devices

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$100,000.00
Award Year:
2007
Program:
SBIR
Phase:
Phase I
Contract:
0637261
Agency Tracking Number:
0637261
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
SINMAT, INC.
2153 SE HAWTHORNE RD STE 129, Suite 440, GAINESVILLE, FL, 32641
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
024935517
Principal Investigator:
Deepika Singh
ScD
(352) 334-7237
singh@sinmat.com
Business Contact:
Deepika Singh
ScD
(352) 334-7237
singh@sinmat.com
Research Institution:
n/a
Abstract
This Small Business Innovation Research (SBIR) project proposes to develop a novel single step shallow trench isolation (STI) planarization. An ideal STI Chemical Mechanical Planarization (CMP) process is expected to be a single step process, which directly and rapidly removes the overburden dielectric layer with minimum topography formation or defect generation. However, the present state of the art processes are plagued with several challenges including (a) poor planarization, (b) small processing window, and (c) high defectivity. We propose to develop a novel high planarity and high selectivity (HP-HS) direct STI CMP process based on combination of coated silica particles and chemical additives. The unique feature of this process is the use of surfactant additives in combination with coated particles to obtain non-linear pressure dependent polishing characteristics, which results in high planarity polishing of the silica surface. The successful implementation of the single step STI CMP process is expected to meet or exceed the technical performance levels of the 45 nm manufacturing node while decreasing chip manufacturing costs by up to $800 million. The reduction in costs is largely due to the simplification of the manufacturing process, higher throughput and increased yield.

* information listed above is at the time of submission.

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