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SBIR Phase II: Novel Hybrid Rapid Thermal Processing (HRTP) Systems for Annealing of Advanced Silicon Devices

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0725021
Agency Tracking Number: 0539607
Amount: $500,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: EL
Solicitation Number: NSF 05-557
Solicitation Year: 2005
Award Year: 2007
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
United States
DUNS: 024935517
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Syamal Lahiri
 (352) 334-7237
Business Contact
 Syamal Lahiri
Title: PhD
Phone: (352) 334-7237
Research Institution

This Small Business Innovation Research Phase II project focuses on development of a novel high-temperature system for processing of advanced silicon devices. Currently used rapid thermal processing (RTP) systems result in substantial dopant profile broadening because of their relatively large time constants. The development of a novel Hybrid Rapid Thermal Process (HRTP) system which combines the advantages of RTP and laser annealing will be accomplished through this project. The advantages of HRTP anneals was demonstrated in the Phase I of the project. In the Phase II project extensive thermal simulation studies will be performed to understand, optimize and scale up the process. Rapid Thermal Processing (RTP) systems are a critical part of semiconductor manufacturing operations and are used to form gate oxides, silicides and annealed ion implanted dopants for formation of ultra-shallow junctions. The market-size for these applications exceeds $500 M/year. With the rapid miniaturization of the devices, there is a strong need to develop higher ramp rate and higher
temperature annealing systems to achieve the formation of ultra-shallow junctions. The proposed HRTP system is expected to fill this niche. The HRTP system can also be usedin thermal annealing of wide band gap semiconductors such as GaN and SiC as they require extremely high temperature, which cannot be achieved by traditional systems.

* Information listed above is at the time of submission. *

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