Novel Atomically Smooth Conformal Finishing Method for Ultra-Rapid Removal of Sub-Surface Damage and Stresses in SiC Mirrors

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,998.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-09-C-7123
Agency Tracking Number:
B083-017-0622
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
SINMAT, INC.
2153 Hawthorne Road, GTEC Center, Suite 129, Box2, Gainesville, FL, 32641
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
024935517
Principal Investigator:
Deepika Singh
President and Scientist
(352) 334-7237
singh@sinmat.com
Business Contact:
Deepika Singh
President
(352) 334-7237
singh@sinmat.com
Research Institution:
n/a
Abstract
Silicon carbide (SiC) has long been recognized as an attractive mirror material due to its superior mechanical and thermal properties when compared to conventional optical materials. However, the extreme mechanical strength results in significant sub-surface damage (SSD) which needs to be removed by large area conformal polishing methods. The current state-of-the-art polishing methods are either typically very slow or introduce a high density of defects or large stresses. Sinmat plans to investigate a novel ultra-gentle and ultra-rapid Reactive Chemical Mechanical Planarization (RCMP) method to rapidly remove SSD and stresses from SiC mirrors. The polishing process is expected to be more than 100 times faster than that of current processes adopted in the industry, thereby resulting in significant time- and cost-savings. In the Phase I of this project, we plan to demonstrate the feasibility of this process to conformally, rapidly remove SSD in SiC substrates, whereas in Phase II we plan to integrate the process with figuring technologies leading to the development of precision SiC mirror in a rapid and scalable manner.

* information listed above is at the time of submission.

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