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Novel Atomically Smooth Conformal Finishing Method for Ultra-Rapid Removal of Sub-Surface Damage and Stresses in SiC Mirrors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-09-C-7123
Agency Tracking Number: B083-017-0622
Amount: $99,998.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA08-017
Solicitation Number: 2008.3
Solicitation Year: 2008
Award Year: 2009
Award Start Date (Proposal Award Date): 2009-03-27
Award End Date (Contract End Date): 2009-09-27
Small Business Information
2153 Hawthorne Road GTEC Center, Suite 129, Box2
Gainesville, FL 32641
United States
DUNS: 024935517
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Deepika Singh
 President and Scientist
 (352) 334-7237
Business Contact
 Deepika Singh
Title: President
Phone: (352) 334-7237
Research Institution

Silicon carbide (SiC) has long been recognized as an attractive mirror material due to its superior mechanical and thermal properties when compared to conventional optical materials. However, the extreme mechanical strength results in significant sub-surface damage (SSD) which needs to be removed by large area conformal polishing methods. The current state-of-the-art polishing methods are either typically very slow or introduce a high density of defects or large stresses. Sinmat plans to investigate a novel ultra-gentle and ultra-rapid Reactive Chemical Mechanical Planarization (RCMP) method to rapidly remove SSD and stresses from SiC mirrors. The polishing process is expected to be more than 100 times faster than that of current processes adopted in the industry, thereby resulting in significant time- and cost-savings. In the Phase I of this project, we plan to demonstrate the feasibility of this process to conformally, rapidly remove SSD in SiC substrates, whereas in Phase II we plan to integrate the process with figuring technologies leading to the development of precision SiC mirror in a rapid and scalable manner.

* Information listed above is at the time of submission. *

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