SJT Micropower

Company Information

Company Name
SJT Micropower
Address
AZ
Fountain Hills, AZ, 85268-1515
Phone
n/a
URL
n/a
DUNS
185307266
Number of Employees
4
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$469,295.00
5
SBIR Phase II
$1,375,125.00
2
STTR Phase I
$98,975.00
1
STTR Phase II
$730,629.00
1

Award List

  1. SOI MESFETs for Ultra-Low Power Electronic Circuits

    Amount: $730,629.00

    Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity ...

    STTR Phase II 2010 Defense Advanced Research Projects AgencyDepartment of Defense
  2. Unconditionally Stable Low Dropout Regulators for Extreme Environments

    Amount: $99,949.00

    We have developed a fully integrated LDO regulator using a patented transistor technology that can be manufactured in high volume commercial semiconductor foundries with no changes to the process flow ...

    SBIR Phase I 2010 National Aeronautics and Space Administration
  3. SOI MESFETs for Extreme Environment Electronics

    Amount: $69,609.00

    We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs). Our technology allows MESFETs to be ...

    SBIR Phase I 2006 National Aeronautics and Space Administration
  4. SOI MESFETs for Ultra-Low Power Electronic Circuits

    Amount: $98,975.00

    Simulations of high performance silicon-on-insulator (SOI) MESFETs show that they can be used for ultra-low power (ULP) radio frequency electronics with power added efficiencies (PAE) that are 10 time ...

    STTR Phase I 2007 Defense Advanced Research Projects AgencyDepartment of Defense
  5. Wide Temperature Range DC-DC Boost Converters for Command/Control/Drive Electronics

    Amount: $99,740.00

    We shall develop wide temperature range DC-DC boost converters that can be fabricated using commercial CMOS foundries. The boost converters will increase the low voltage supply (~ 0.7 to 3V) of an adv ...

    SBIR Phase I 2008 National Aeronautics and Space Administration
  6. Ultra-Low Power Transceiver for the Medical Implant Communications Service

    Amount: $99,999.00

    DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a transmitter implanted inside the huma ...

    SBIR Phase I 2007 Department of Health and Human Services
  7. Ultra-Low Power Transceiver for the Medical Implant Communications Service

    Amount: $749,219.00

    DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a complete transceiver implanted insid ...

    SBIR Phase II 2009 Department of Health and Human Services
  8. Unconditionally Stable Low Dropout Regulators for Extreme Environments

    Amount: $625,906.00

    We have developed a low dropout (LDO) regulator using a patented MESFET transistor technology that can be manufactured in commercial CMOS foundries with no changes to the process flow. The regulator i ...

    SBIR Phase II 2011 National Aeronautics and Space Administration
  9. CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters

    Amount: $99,998.00

    We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is fully CMOS-compatible and can be integr ...

    SBIR Phase I 2011 National Aeronautics and Space Administration

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