SJT Micropower

Company Information
Address AZ
Fountain Hills, AZ, 85268-1515


Information

DUNS: 185307266

# of Employees: 4


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. Unconditionally Stable Low Dropout Regulators for Extreme Environments

    Amount: $625,906.00

    We have developed a low dropout (LDO) regulator using a patented MESFET transistor technology that can be manufactured in commercial CMOS foundries with no changes to the process flow. The regulator i ...

    SBIRPhase II2011National Aeronautics and Space Administration
  2. CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters

    Amount: $99,998.00

    We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is fully CMOS-compatible and can be integr ...

    SBIRPhase I2011National Aeronautics and Space Administration
  3. Unconditionally Stable Low Dropout Regulators for Extreme Environments

    Amount: $99,949.00

    We have developed a fully integrated LDO regulator using a patented transistor technology that can be manufactured in high volume commercial semiconductor foundries with no changes to the process flow ...

    SBIRPhase I2010National Aeronautics and Space Administration
  4. SOI MESFETs for Ultra-Low Power Electronic Circuits

    Amount: $730,629.00

    Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity ...

    STTRPhase II2010Defense Advanced Research Projects Agency Department of Defense
  5. Ultra-Low Power Transceiver for the Medical Implant Communications Service

    Amount: $749,219.00

    DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a complete transceiver implanted insid ...

    SBIRPhase II2009Department of Health and Human Services
  6. Wide Temperature Range DC-DC Boost Converters for Command/Control/Drive Electronics

    Amount: $99,740.00

    We shall develop wide temperature range DC-DC boost converters that can be fabricated using commercial CMOS foundries. The boost converters will increase the low voltage supply (~ 0.7 to 3V) of an adv ...

    SBIRPhase I2008National Aeronautics and Space Administration
  7. Ultra-Low Power Transceiver for the Medical Implant Communications Service

    Amount: $99,999.00

    DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a transmitter implanted inside the huma ...

    SBIRPhase I2007Department of Health and Human Services
  8. SOI MESFETs for Ultra-Low Power Electronic Circuits

    Amount: $98,975.00

    Simulations of high performance silicon-on-insulator (SOI) MESFETs show that they can be used for ultra-low power (ULP) radio frequency electronics with power added efficiencies (PAE) that are 10 time ...

    STTRPhase I2007Defense Advanced Research Projects Agency Department of Defense
  9. SOI MESFETs for Extreme Environment Electronics

    Amount: $69,609.00

    We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs). Our technology allows MESFETs to be ...

    SBIRPhase I2006National Aeronautics and Space Administration

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