P-Type Copper Oxide Based Transparent Conducting Oxides
Small Business Information
120 Centennial Avenue, Piscataway, NJ, 08843
Dr. Gary S. Tompa
AbstractRecently, researchers at Tokyo Institute of Technology announced that they had succeeded in forming a p-type CuO- X based transparent and conductive material. Heretofore, transparent (wide bandgap) conductive oxides have been predominantly n-type. We, ourselves, have been highly successful in producing a variety of n-type highly conductive, highly luminescent and near epitaxial oxide films. If p-type transparent oxides can be repeatable and economically reproduced, a great variety of new, wholly transparent applications opens up, including diodes, transistors, photovoltaics, sensors, p-type semiconductor contact layers, and luminescent devices. We herein propose, in Phase I, to perform a rapid proof of principle materials deposition and materials characterization study. Depositions of doped and undoped CuO:Ga will be made in our MOCVD reactor and films will be characterized by Hall, PL, Raman, and other techniques. If we are successful in producing p-type materials in Phase I, we will focus on refining materials and processes and producing wholly transparent p-n heterostructure diode devices in Phase II. Development of wide bandgap p-type transparent conductive oxides, combined with existing n-type transparent conductive oxides could expand and generate several markets, including those of diode, transistors, wholly transparent displays, UV/ blue emitters and detectors, and so on. Market leadership will result from materials capabilities.
* information listed above is at the time of submission.