Radiation Hardened Nondestructive Read Out (NDRO) Ce(x)Mn(y)O(3) Ferroelectric Based EEPROM Memory

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DTRA0103C0039
Agency Tracking Number: 00-1031
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
120 Centennial Ave., Piscataway, NJ, 08854
DUNS: 787144807
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Joe Cuchiaro
 Vice President
 (719) 260-9589
Business Contact
 Gary Tompa
Title: President
Phone: (732) 885-5909
Email: gstompa@aol.com
Research Institution
SMI has discovered a new ferroelectric material, CexMnyO3 (CMO), that, for the first time, will allow nonvolatile ferroelectric memories to be formed directly on silicon - greatly simplifying the cell geometry and thus increasing density and performance -all while eliminating manufacturing steps and thus reducing costs. Heretofore, all ferroelectric memories have required a silicon / ferroelectric interlayer barrier electrode to be used. The material was demonstrated using SMI's SpinCVDTM Metal OrganicChemical Vapor Deposition (MOCVD) techniques. The ferroelectric layer is crystallized into a perovskite at a suitable temperature for direct integrated circuit front-end process insertion and has produced a nonvolatile memory without use of metalelectrodes. The most compelling aspects are that the ferroelectric phase can be grown directly on silicon and that the dielectric constant of the ferroelectric film is relatively low (more than an order of magnitude lower that PZT, ranging between 20 and100 depending upon polarization state) and 25 times higher than silicon oxide. The low perovskite crystallization temperature and compatibility of the films with silicon make CMOs ideal for a ferroelectric field effect transistors (FEFET) simulating a DRAMcell. We propose to build upon the Phase I effort by manufacturing an EEPROM 1-transistor (FeFET) memory that is scaleable for very high-density memories. This FEFET design will allow a FE memory to rival stacked-gate Flash cells in density, but withoutthe drawbacks of floating gate technology. We will work with a proven Rad-Hard device production company and other experts in the field to ensure a commercializable process and product. We will combine the SMI ferroelectric with our partner's deviceradiation designs for product manufacture. Phase III will be a manufacturing partnership producing drop-in Radiation Hard nonvolatile memory devices.

* Information listed above is at the time of submission. *

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