Radiation Hard Lead Zirconium Titanium (PZT) for Ferroelectric and Plezoelectric Devices

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-02ER83525
Agency Tracking Number: 70224S02-I
Amount: $99,920.00
Phase: Phase I
Program: SBIR
Awards Year: 2002
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
120 Centennial Avenue, Piscataway, NJ, 08854
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Joseph Cuchiaro
 (719) 260-9589
Business Contact
 Joseph Cuchiaro
Title: 70224
Phone: (719) 260-9589
Email: jcuchiaro@aol.com
Research Institution
70224 Ferroelectric properties of the thin film Pb(Zr x Ti 1-x) 03 (PZT) can be employed in radiation hard nonvolatile memory (NVRAM) and micro-electrical mechanical sensors (MEMS) to enhance component endurance and lifetime. The ability of PZT to resist radiation effects is dependent on its unique composition and film texture. Although Argonne National Laboratory (ANL) has developed radiation resistant PZT compositions, the technology has not yet been used to mitigate radiation effects in device components. This project will demonstrate the ferroelectric electrical and radiation performance advantages of PZT for space flight systems containing MEMS components. In Phase I, ANL will test PZT films and provide the information necessary to control the optimum radiation resistant PZT microstructure grain size. The resulting ferroelectric structure will be implemented into a radiation hard MEMS device. A production deposition capability for optimal microstructure resistance PZT, directly applicable to nonvolatile ferroelectric Random Access Memory (FeRAM) devices, will be produced. Commercial Applications and Other Benefits as described by the awardee: Superior radiation hardened precision ferroelectric materials should be implemented in accelerometers for space craft navigation systems. Ferroelectric/piezoelectric PZT films also use should find in nonvolatile memories and sensors subjected to radiation environments, or in general commercial applications not requiring radiation resistance. The controlled grain growth of the active ferroelectric layer should provide extended lifetime endurance due to reduced defects.

* Information listed above is at the time of submission. *

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