Antimonide-based, High-speed, Low-power, Heterojunction Bipolar Transistor

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DASG6003C0041
Agency Tracking Number: 01-0473
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
120 Centennial Ave., Piscataway, NJ, 08854
DUNS: 787144807
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Aleksandr Maiorov
 (732) 885-5909
Business Contact
 Gary Tompa
Title: President
Phone: (732) 885-5909
Research Institution
In the phase I SBIR program Structured Materials Industries, Inc. (SMI) successfully demonstrated that an antimonide-based HBT, with speeds in excess of 100 GHz and near zero turn-on voltage should be achievable. This was done by growing an AlInAsSb layerlattice matched to GaSb with an Al content less than 50%--overcoming the miscibility gap. To our knowledge, such growth has not been previously reported. The enabled device structure has the advantages of near zero-turn-on-voltage (low power) and highmobilities (high speed). Thus, high-speed low power devices, which are needed for high-speed communication, will now be possible. The issues resolved in the Phase I effort were lattice matching, alloy tuning, doping, device design, and measurement ofmaterial properties, among others. In Phase II, we propose to build upon the results from Phase I and (1) produce fully functioning HBT devices; (2) demonstrate zero-turn-on-voltage device operation; (3) fully characterize the devices; (4) package thedevices (for Phase III commercialization); (5) optimize the device design to achieve > 100 GHz operation; (6) sample devices to collaborators, and (7) define the routine device production routes for Phase III commercialization. Phase III commercializationwill go forward in an SMI-Sarnoff joint venture for military and commercial applications.

* Information listed above is at the time of submission. *

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