Antimonide-based, High-speed, Low-power, Heterojunction Bipolar Transistor

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$65,000.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
DASG60-01-P-0072
Award Id:
53141
Agency Tracking Number:
01-0473
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
120 Centennial Ave., Piscataway, NJ, 08854
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
787144807
Principal Investigator:
Gary Tompa
Senior Scientist
(732) 885-5909
gstompa@aol.com
Business Contact:
Gary Tompa
President
(732) 885-5909
gstompa@aol.com
Research Institute:
n/a
Abstract
Structured Materials Industries (SMI) proposes the development of antimonide-based, high-speed, low-power, heterojunction bipolar transistors (HBTs). These HBTs will have advantages over other compound semiconductor HBTs including lower power consumptionand zero turn on voltage. They are also required for the fabrication of all antimonide-based circuits integrating recent advances on optoelectronic antimonide-based devices. SMI will work closely with Sarnoff Corporation on this project. Sarnoff hasextensive experience in the growth and fabrication of antimonide based detectors, lasers, and thermophotovoltaic (TPV) devices. SMI/Sarnoff recently demonstrated a high-efficiency 2.4 micron InGaAsSb TPV cell with internal quantum efficiencies over 90% ata peak wavelength of 2.0 microns. This technology is transferable to the fabrication of antimonide-based HBTs. In the Phase I program, we will explore the most promising structure for a high-efficiency, large bandwidth HBT, building upon our existingInGaAsSb materials experience. The optimum material compositions and device design will be determined and proof-of-principle devices will be fabricated. In the Phase II program the semi-insulating substrate required to accurately measure high-speedoperation will be developed. The antimonide-based HBTs will be optimized and demonstration circuits using the devices will be fabricated.These HBTs will have advantages over other compound semiconductor HBTs including lower power consumption and zero turnon voltage. They are also required for the fabrication of all antimonide-based circuits integrating recent advances on optoelectronic antimonide-based devices.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government