CeMnO3 Coupled BJT Memory Device

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
DTRA01-02-P-0272
Agency Tracking Number:
02-0662
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Structured Materials Industries
120 Centennial Ave., Piscataway, NJ, 08854
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
787144807
Principal Investigator:
Joseph Cuchiaro
Vice President
(719) 260-9589
jcuchiaro@aol.com
Business Contact:
Joseph Cuchiaro
Vice President
(719) 260-9589
jcuchiaro@aol.com
Research Institution:
n/a
Abstract
"Bipolar Junction Transistors (BJT) are used for power and mixed signal applications in radiation environments. Current BJT devices perform with volatile operation requiring constant power supply for uninterrupted access. We propose to create a nonvolatileBJT memory device using proprietary SMI cerium based ferroelectric material (patent pending) produced by Metal Organic Chemical Vapor Deposition (MOCVD) to form a radiation hard single transistor (1T) Random Access Memory (RAM). Ferroelectric dipolesretain information by physical distortion of the crystal lattice which, unlike electronic tunneling, is resistant to state change from exposure to radiation and loss of information from repeated switching cycles. This program will build a proof ofprinciple radiation resistant ferroelectric capacitor BJT 1T memory device. We will use commercial BJT devices with SMI produced cerium films to demonstrate greater than 1 hour 1T retention in Phase I. In Phase II we will extend this work to a prototypememory array. To accomplish this task, we will work with United Technologies Microelectronic Systems (UTMC), to assure a commercializable structure and process are developed. Our Phase III commercialization will begin with UTMC introduction of a radiationhardened nonvolatile memory product and SMI licensing of project generated intellectual property, followed by integration of the inovation into next generation IC memory devices. A ferroelectric 1T

* information listed above is at the time of submission.

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