CeMnO3 1T Bipolar Memory

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: DTRA01-02-P-0107
Agency Tracking Number: T021-0073
Amount: $69,973.00
Phase: Phase I
Program: SBIR
Awards Year: 2003
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
120 Centennial Ave., Piscataway, NJ, 08854
DUNS: 787144807
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Joseph Cuchiaro
 Vice President
 (719) 260-9589
 jcuchiaro@aol.com
Business Contact
 Joseph Cuchiaro
Title: Vice President
Phone: (719) 260-9589
Email: jcuchiaro@aol.com
Research Institution
N/A
Abstract
Bipolar Junction Transistors (BJT) are used for power and mixed signal applications in radiation environments. Current BJT devices perform with volatile operation requiring constant power supply for uninterrupted access. We propose to create a nonvolatileBJT memoy device using proprietary SMI cerium based ferroelctric mterial (patent pending) prodced by Metal Organic Chemical Vapor Deposition (MOCVD) to form a radiation hard single transistor (1T) Random Access Memory (RAM). Ferroelectric dipoles retaininformation by physcal distortion of the crystal lattice which unlike electronic tunneling, is resistant to state change from exposure to radiation and loss of information from repeated switching. This program will build a proof of principle radiationresistant ferroelectric capacitor BJT 1T memory device. We will ue commercial JT devices with SMI produced cerium films to demonstrate greater than 1 hour 1T retention in Phase I. In Phase II w will extend this work to a prototype memory array. Toaccomplish this task, we will work with United Technologies Microelectronic Systems (UTMC), to assure that a commercializable structure and process are deveoped. Our Phase III commercializatioon will begin with UTMC introduction of a radiation hardenednonvolatile memoy product and SMI licensing of project generated intellectual property, followed by integration of the inovation into next generation IC memory devices. A ferroelectric 1T memory will advance current memory technology to be compatible withmicroprocessor speed in a main memory product that has potential to replace nonvolatie memory and address a market of $6B and increase radiation hard memory density significantly.

* Information listed above is at the time of submission. *

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