Chip-scale Photonic Crystal Optical Networks Based on Epitaxial LiNbO3 Thin Films

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-04-C-0017
Agency Tracking Number: F033-0164
Amount: $100,000.00
Phase: Phase I
Program: STTR
Awards Year: 2004
Solicitation Year: 2003
Solicitation Topic Code: AF03T021
Solicitation Number: N/A
Small Business Information
STRUCTURED MATERIALS INDUSTRIES
Suite 103, 201 Circle Drive, Piscataway, NJ, 08854
DUNS: 787144807
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Nick Sbrockey
 Scientist / Program Manager
 (732) 302-9274
 sbrockey@optonline.net
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Email: GSTompa@aol.com
Research Institution
 UNIV. OF WISCONSIN
 Leon McCaughn
 750 University Avenue
Madison, WI, 53706
 (608) 262-0311
 Nonprofit college or university
Abstract
In this Phase I STTR effort, Structured Materials Industries, Inc. (SMI), in collaboration with our academic partners at the University of Wisconsin at Madison (UWM), will develop technology to build chip-scale integrated photonic crystal device networks. The photonic crystal devices will be fabricated in epitaxial lithium niobate (LiNbO3) thin films. This effort we will build on technology invented at UWM, to deposit and pattern epitaxial LiNbO3 thin films. In this Phase I effort, we will develop the technology to integrate photonic device structures into chip-scale optical networks. We will demonstrate the integration technology by building and testing an integrated electro-optically gated 4-channel add/drop multiplexer. In Phase II, we will design and fabricate networks containing different optical and electro-optical devices, including lasers, detectors, switches, modulators and multiplexers. The network components will be connected with photonic crystal waveguides, built directly into the epitaxial LiNbO3 thin film. In Phase III, we will commercialize this technology for both government and private sector markets. The successful development of this integration technology, combined with our LiNbO3 epitaxial film technology, will enable a direct route to large-scale integrated (LSI) optical device networks. These products will initially find applications in military markets, integrating high-speed communications from command, control and sensor arrays. These products will also meet growing market demands for telecommunications, digital signal processing and all optical computing. These markets are expected to reach multi-billion dollar size by the year 2006.

* information listed above is at the time of submission.

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