High Efficiency InGaN Multijunction Solar Cells

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$100,000.00
Award Year:
2004
Program:
STTR
Phase:
Phase I
Contract:
HQ0006-04-C-7103
Agency Tracking Number:
B045-017-0236
Solicitation Year:
2004
Solicitation Topic Code:
MDA04-T017
Solicitation Number:
N/A
Small Business Information
STRUCTURED MATERIALS INDUSTRIES
Suite 102, 201 Circle Drive, Piscataway, NJ, 08854
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
787144807
Principal Investigator
 Catherine Rice
 Scientist
 (732) 302-9274
 cerice@structuredmaterials.com
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Email: gstompa@structuredmaterials.com
Research Institution
 Cornell University
 Gary Decker
 120 Day Hall
Ithaca, NY, 14853
 (607) 255-2939
 Nonprofit college or university
Abstract
This Phase I STTR program will demonstrate the feasibility of fabricating inherently radiation hard, high efficiency solar cells based on In(1-x)Ga(x)N photovoltaic devices using MOCVD. Recent results show that InN has a much narrower bandgap than previously believed: 0.7 eV, compared to earlier estimates of 2 eV. This discovery opens the door to fabrication of photovoltaic devices responsive from the near infrared through UV ranges. Thus, unprecedented efficiencies should be possible. In addition, GaN-based solar cells have potentially greater radiation resistance and ability to operate under temperature extremes than those currently available. In this program, Dr. William Schaff of Cornell University (a pioneer in InN and InGaN technology) will lead material optimization efforts and Structured Materials Industries, Inc. (SMI) will focus on demonstrating high efficient nitride MOCVD, to carry GaN-based solar cells from laboratory to production. The team will deposit In(1-x)Ga(x)N films of varied composition, and demonstrate p- and n-doping and junction formation, and develop cell designs, to demonstrate the feasibility of radiation hard, high efficiency In(1-x)Ga(x)N solar cells. Fabrication and demonstration of prototype devices and process scale-up will take place in Phase II. Successful completion of this program will enable a new class of radiation-hardened, robust, efficient, economical solar cells for space and terrestrial applications.

* information listed above is at the time of submission.

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