Electro-Optically Activated, Si-Based Laser for All-Optic Integrated Systems

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$100,000.00
Award Year:
2005
Program:
STTR
Phase:
Phase I
Contract:
FA9550-05-C-0102
Agency Tracking Number:
F054-013-0377
Solicitation Year:
2005
Solicitation Topic Code:
AF05-T013
Solicitation Number:
n/a
Small Business Information
STRUCTURED MATERIALS INDUSTRIES
201 Circle Drive North, Unit # 102, Piscataway, NJ, 08854
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
787144807
Principal Investigator:
Brent Hoerman
Scientist
(732) 302-9274
bhoerman@structuredmaterials.com
Business Contact:
Gary Tompa
President
(732) 302-9274
gstompa@structuredmaterials.com
Research Institution:
CORNELL UNIV.
Vicki Dan
120 Day Hall
Ithaca, NY, 14853
(607) 255-5014
Nonprofit college or university
Abstract
In this STTR effort, Structured Materials Industries, Inc. (SMI), in collaboration with our academic and industrial partners will design, develop, and demonstrate an electro-optically activated, silicon-based laser based on specially designed nanoscale photonic structures. The technology to be developed and matured in this effort will overcome the main limitations to realization of the high-density integrated-optic circuits required for chip-scale photonic networks in silicon -- achieving a practical Si based laser. Importantly, our approach includes the fundamental ability to be electrically pumped, a key requirement for truly unleashing the promise of silicon photonics. Moreover, the structures developed under this program will form the building blocks for a family of devices based on active silicon nanophotonics, thereby providing low power, high bandwidth, high speed and ultra-small optoelectronic components to several markets. In Phase I of this project, we propose to expand our fabrication of preliminary nanoscale cavity devices to address the development of an electronically driven laser on a silicon chip. In Phase II we will complete development of the devices and finalize a route for integrating passive and active components into complex, electro-optical systems on a single silicon chip.

* information listed above is at the time of submission.

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