SBIR Phase I: Chemical Vapor Deposition Tool for Device Grade SiC Epilayers

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$100,000.00
Award Year:
2006
Program:
SBIR
Phase:
Phase I
Contract:
0539738
Award Id:
79627
Agency Tracking Number:
0539738
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
201 Circle Drive, Piscataway, NJ, 08854
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Edwin Dons
Dr
(732) 302-9274
edons@structuredmaterials.com
Business Contact:
Gary Tompa
Mr
(732) 302-9274
gstompa@aol.com
Research Institution:
n/a
Abstract
This Small Business Innovation Research (SBIR) Phase I project will result in a high throughput, large area, Chemical Vapor Deposition (CVD) tool for the production of device grade SiC epitaxial films and substrates. This proposal will develop, test and implement the technology. Silicon carbide (SiC) is a wide band gap material that is the proven key enabler of the next-generation high power, high-frequency and radiation hard device applications succeeding silicon and gallium arsenide. Due to its unique materials and electronic properties, SiC devices can function under higher power ratings as well as higher frequency and temperatures compared to Si and GaAs products. For that reason, these high performance devices are intensely sought after for both commercial and military device applications. To date, however, its commercial potential has been limited by a lack of production capacity for large area, device grade epitaxial films and substrates. The proposed work will address the current materials limitations of SiC epitaxial process technology through enhanced processing capabilities. The unique materials properties of Silicon Carbide allow the material to be used in high performance devices for applications that require high power, high frequency or high temperature. Such devices are under development for lighting, consumer electronics, industrial electronics and the automotive industry for example. SiC devices will also find use in industrial motors and power supplies requiring high voltage. In addition to performance benefits, SiC offers significant cost saving opportunities by eliminating expensive cooling systems needed in a range of industrial equipment common to factories worldwide. However, development has been hampered by a lack of inexpensive, high quality SiC substrate material.

* information listed above is at the time of submission.

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