SBIR Phase I: Chemical Vapor Deposition Tool for Chalcogenide Random Access Memory (C-RAM).

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0637775
Agency Tracking Number: 0637775
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2006
Solicitation Topic Code: MI
Solicitation Number: NSF 06-553
Small Business Information
DUNS: 787144807
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Catherine Rice
 (201) 435-5100
Business Contact
 Catherine Rice
Title: PhD
Phone: (201) 435-5100
Research Institution
This Small Business Innovation Research Phase I project will result in a high throughput, large area, Chemical Vapor Deposition (CVD) tool for the production of device grade chalcogenide films for chalcogenide random access memory (C-RAM) non-volatile memory. Current non-volatile memory technology (flash memory) is rapidly approaching its density limit, and C-RAM is one of the top contenders as the next generation non-volatile memory technology, due to its small cell size, fast write/erase speed, low write/erase voltage, high endurance and radiation hardness. However, current state-of-the-art C-RAM technology relies on sputtering to deposit the active chalcogenide layer. This sputtering process limits further device improvement because of difficulties in meeting requirements for device conformality, film adherence and compositional control and wafer yield. CVD is the industry standard deposition technology for volume production of high quality thin films, but currently no tools for chalcogenide deposition are available. C-RAM memory promises to be the next generation technology for non-volatile memory in commercial and military computing applications, and should capture a substantial portion of the $34B (2007) non-volatile memory market. The availability of this new high density, long-lived memory technology will enable smaller, faster, more reliable computing for a host of commercial and military applications.

* Information listed above is at the time of submission. *

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