SBIR Phase I: Production Halide-CVD System for Bulk SiC Crystal Growth

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0637900
Agency Tracking Number: 0637900
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2006
Solicitation Topic Code: MI
Solicitation Number: NSF 06-553
Small Business Information
201 CIRCLE DRIVE NORTH, SUITE 102/103, PISCATAWAY, NJ, 08854
DUNS: 787144807
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Edwin Dons
 DPhil
 (732) 302-9274
 edons@structuredmaterials.com
Business Contact
 Edwin Dons
Title: DPhil
Phone: (732) 302-9274
Email: edons@structuredmaterials.com
Research Institution
N/A
Abstract
This Small Business Innovation Research (SBIR) Phase I research project will result in a low cost-of-ownership production system for commercial grade bulk SiC substrates up to 6"" in diameter. It proposes to develop, test and implement a production system for high purity, bulk SiC crystal growth based on high temperature Halide Chemical Vapor Deposition (HCVD). The advantages of this approach over current manufacturing technology are multifold: HCVD crystal growth processes yield substrates of higher purity, it offers better control over the material stoichiometry and it offers the advantage of highly accurate impurity control for conductive and semi-insulating substrates. Silicon carbide (SiC) is a wide bandgap material that is the proven key enabler of the next-generation high power, high-frequency and radiation hard device applications succeeding silicon and gallium arsenide. Due to its unique materials and electronic properties, SiC devices can function under higher power ratings as well as higher frequency and temperatures compared to Si and GaAs products. For that reason, these high-performance devices are intensely sought after for both commercial and military device applications. To date, however, its commercial potential has been limited by a lack of production capacity for high purity epitaxial films and substrates.

* Information listed above is at the time of submission. *

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