Fabrication Technology for Oxide Film Heterostructure Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-09-C-0163
Agency Tracking Number: F08B-T22-0054
Amount: $100,000.00
Phase: Phase I
Program: STTR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: AF08-BT22
Solicitation Number: 2008.B
Small Business Information
201 Circle Drive North, Unit # 102, Piscataway, NJ, 08854
DUNS: 787144807
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Nick Sbrockey
 Senior Scientist
 (732) 302-9274
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Email: GSTompa@structuredmaterials.com
Research Institution
 Drexel University
 Margaret Vigiolto
 Office of Research
3201 Arch Street Suite 100
Philadelphia, PA, 19104
 (215) 895-2311
 Nonprofit college or university
In this STTR program, Structured Materials Industries, Inc. (SMI) and our STTR partners will develop commercially viable fabrication technology for oxide heterostructure based nano electronic devices.  Oxide heterostructure devices, consisting of a polar oxide such as LaAlO3 and a non-polar oxide such as SrTiO3, offer a novel route to nano devices.  Although the initial concepts for 2 DEG oxide heterostructures have been demonstrated, the critical fabrication technology to build these devices at nanometer dimensions is still needed.  This STTR will address this critical need, and develop film deposition technology for high-quality, crystalline polar oxide films, with mono-layer thickness control.  Although the primary program emphasis will be on film deposition, we will also address issues for patterning and contact formation, as enabling technology to demonstrate fully functional prototypes in Phase II. BENEFIT: Oxide heterostructures offer the potential for nanoscale devices for both logic and memory applications.  The advantages include high information density, high speed and low power requirements, due to the small device dimensions, and inherent radiation hardness, since no charge storage is involved.  In Phase III, SMI will implement the oxide heterostructure based memory devices in applications of value to the Air Force.  SMI will also commercialize the technology resulting from this STTR program for a wide range of other military, commercial, scientific and space applications.)

* Information listed above is at the time of submission. *

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