Low Cost InGaN Device Production and HOVPE Tool

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$99,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-09-C-0224
Agency Tracking Number:
08SB2-0814
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
STRUCTURED MATERIALS INDUSTRIES
201 Circle Drive North, Unit # 102, Piscataway, NJ, 08854
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
787144807
Principal Investigator:
Nick Sbrockey
Senior Scientist
(732) 302-9274
sbrockey@structuredmaterials.com
Business Contact:
Gary Tompa
President
(732) 302-9274
GSTompa@structuredmaterials.com
Research Institution:
n/a
Abstract
In this SBIR effort, Structured Materials Industries, Inc. www.structuredmaterials.com (SMI) will develop a low-cost production technology, and the commercial tool set, for low cost InGaN devices production. InGaN and the related group III-Nitride semiconductors are important for a range of electronic device applications, spanning LED's, photovoltaics, detectors, and high speed / high power devices. Present production technologies such as MOCVD and MBE are too slow and too expensive for commercial production of all but the most high-end products. This project will develop a scalable production HVPE/OMVPE hybrid tool for InGaN and related materials, capable of low cost and high volume device production. In Phase I, we will demonstrate technical feasibility of the HVPE/OMVPE hybrid concept. In Phase II, we will reduce the concept to practice and build a prototype HVPE/OMVPE hybrid reactor. We will also demonstrate the capabilities in Phase II, by producing InGaN based devices - nominally a photovoltaic and a quantum well LED.

* information listed above is at the time of submission.

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