IMPLANTATION/EXCIMER LASER ANNEALING FEASIBILITY STUDY

Award Information
Agency:
Department of Defense
Amount:
$63,678.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Defense Advanced Research Projects Agency
Award Year:
1986
Phase:
Phase I
Agency Tracking Number:
4417
Solicitation Topic Code:
N/A
Small Business Information
Spire Corp
Patriots Pk, Bedford, MA, 01730
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 STANLEY W VERNON
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE LACK OF A PROCESS TO DOPE ZNS(X)SE(1-X) FOR P-TYPE CONDUCTIVITY IS THE MAJOR OBSTACLE TO THE ADVANCEMENT OF DEVICE TECHNOLOGY BASED ON WIDE BANDGAP P/N HOMOJUNCTIONS. OF PARTICULAR IMPORTANCE ARE LIGHT-EMITTING DIODES AND INJECTION LASERS FABRICATED FROM ZNSXSE(1-X) WHICH OPERATE IN THE BLUE OR ULTRAVIOLET REGIONS OF THE SPECTRUM, ESSENTIAL FOR SOME TYPES OF SOPHISTICATED COMMUNICATION. SPIRE PROPOSES TO DOPE ZNSXSE(1-X) GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION P-TYPE BY ION IMPLANTATION, FOLLOWED BY EXCIMERLASER ANNEALING, WHICH WILL "QUENCH IN" DESIRABLE ACCEPTOR LEVELS AT CONCENTRATIONS PREVIOUSLY UNOBTAINABLE BY MORE CONVENTIONAL METHODS. THE PHASE I RESEARCH IS A FEASIBILITY STUDY OF THIS METHOD IN WHICH THE IONS (NITROGEN, VANADIUM, AND PHOSPHORUS) AND IMPLANTATION PARAMETERS WILL BE VARIED AFTER THE LASER PARAMETERS ARE OPTIMIZED. ELECTRICAL MEASUREMENTS WILL BE MADE TO DETERMINE CARRIER TYPE, CONCENTRATION, AND MOBILITY FROM ONE SET OF STRUCTURES, AND JUNCTION CHARACTERISTICS WILL BE MEASURED ON THE SECOND SET. FINALLY, THE EMPIRICAL RESULTS WILL BE COMPARED AND ASSESSED SO THAT THE SUPERIOR ROUTE(S) MAY BE PURSUED IN PHASE II RESEARCH.

* information listed above is at the time of submission.

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