ISOELECTRONIC DOPING TECHNIQUES

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$64,627.00
Award Year:
1986
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
4419
Agency Tracking Number:
4419
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Patriots Pk, Bedford, MA, 01730
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
STANLEY M VERNON
(617) 275-6000
Business Contact:
() -
Research Institute:
n/a
Abstract
MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMIC'S) MADE OF GAAS ARE BECOMING INCREASINGLY IMPORTANT FOR USE IN MILITARY SYSTEMS. A MAJOR LIMITATION TO ADVANCEMENT IN THIS FIELD IS THE QUALITY OF THE SEMI-INSULATINGGAAS SUBSTRATES AVAILABLE. SPIRE PROPOSES TO DEVELOP A TECHNIQUE FOR PRODUCING HIGH-QUALITY, LOW-DISLOCATION-DENSITY WAFERS BY THE USE OF AN ISOELECTRONICALLY DOPED GAAS BUFFER LAYER WHICH IS KNOWN TO REDUCE DEFECT PROPAGATION. THE ISOELECTRONIC DOPING OF THIS THIN LAYER IS EXPECTED TO AVOID THE PROBLEMS ENCOUNTERED WITH ISOELECTRONICALLY DOPED BULK SUBSTRATE MATERIALS AND SHOULD PERMIT THE DEPOSITION OF ADDITIONAL EPITAXIAL LAYERS OF DEVICE QUALITY. THE PHASE I EFFORT WILL SEEK TO DEMONSTRATE THE FEASIBILITY OF GROWING IN-DOPED GAAS BUFFER LAYERS IN A PRODUCTION-SIZE METALORGANIC CHEMICAL VAPOR DEPOSITION (MO-CVD) REACTOR AND TO ASSESS THEIR EFFECTIVENESS FOR DISLOCATION REDUCTION.

* information listed above is at the time of submission.

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