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DEFECT REDUCTION IN SIMOX WAFERS

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: N/A
Agency Tracking Number: 9132
Amount: $54,456.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1988
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
Patriots Park, Bedford, MA, 01730
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 DR FEREYDOON NAMAVAR
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
N/A
Abstract
CREATION OF BURIED INSULATING LAYERS IN SILICON WAFERS BY HIGH DOSE OXYGEN IMPLANTATION (SIMOX) HAS GAINED SIGNIFICANT ATTENTION IN THE LAST TWO YEARS. THE SIMOX TECHNOLOGY IS POSITIONED TO BE A PRIME CONTENDER IN THE SILICON-ON-INSULATOR (SOI) ARENA MAINLY BECAUSE OF THE INHERENT RELIABILITY/REPRODUCIBILITY OF THE ION IMPLANTATION TECHNOLOGY. ONE OBSTACLE TO BROADER USE OF THE SIMOX MATERIAL IS THE HIGH DENSITY OF DISLOCATIONS THAT APPEARS IN THE TOP-LAYERSILICON FOLLOWING THE HIGH TEMPERATURE ANNEALING REQUIRED FOR THE PROCESS. THE DISLOCATIONS ARE PARTICULARLY HARMFUL IN THE FABRICATION OF BIPOLAR DEVICES ON SIMOX MATERIAL. SPIRE CORPORATION HAS CONTRIBUTED SIGNIFICANTLY TO THE DEVELOPMENT OF SIMOX TECHNOLOGY AND IS PERFORMING ONGOING RESEARCH IN THIS FIELD. SPIRE PROPOSES TO PERFORM SECONDARY ION IMPLANTATION OF SPECIES SUCH AS GE INTO THE SIMOX WAFERS FOR REMOVING THE DISLOCATIONS CREATED BY THE HIGH TEMPERATURE ANNEAL. PRELIMINARY RESULTS INDICATE THAT LOW DOSES OF GE IN THE TOP-LAYER-SILICON CAUSE AMORPHIZATION AND CREATED STRESS FIELDS. SUBSEQUENT ANNEALING OF THE WAFERS HAS RESULTED IN DISLOCATION DENSITIES BELOW THE DETECTABLE LIMIT OF THE X-TEM OR PLANE VIEW TEM METHODS.

* Information listed above is at the time of submission. *

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