2.1 MICROMETER LIDAR DETECTOR

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$48,090.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
10556
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Spire Corp
Patriots Pk, Bedford, MA, 01730
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Kurt Linden
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
THIS PROPOSAL ADDRESSES THE NEED FOR A HIGH DETECTIVITY PHOTOVOLTAIC LIDAR DETECTOR WITH A SPECTRAL RESPONSE PEAK IN THE 2.1 UM SPECTRAL REGION TO MATCH THE EMISSION FROM THEHIGH PERFORMANCE HO:YAG SOLID STATE LASER PRESENTLY UNDER DEVELOPMENT. DUE TO THE FACT THAT THERE ARE FEW APPLICATIONS WHICH REQUIRE GOOD DETECTORS IN THIS WAVELENGTHREGION, NO HIGH PERFORMANCE DETECTORS ARE AVAILABLE. TWO SEMICONDUCTOR MATERIALS ARE PROMISING FOR YIELDING HIGH PERFORMANCE 2.1 M PHOTOVOLTAIC DETECTORS: HGCDTE AND INGAAS. THE FORMER MATERIAL IS UNDER INTENSE INVESTIGATION FOR USE IN THE 8-12 AND, TO A LESSER EXTENT, THE 3-5 M SPECTRAL REGION, BUT IS EXTREMELY DIFFICULT TO WORK WITH ANDVERY EXPENSIVE. THE LATTER, IS METALLURGICALLY BETTER BEHAVED, AND IS IN WIDE USE IN THE 1.3 AND 1.55 M SPECTRAL REGIONS FOR FIBER-OPTIC APPLICATIONS. THIS MATERIAL CAN BE MADE TO HAVE A SPECTRAL RESPONSE PEAK AT 2.1 M. WE PROPOSE TO INVESTIGATE THE GROWTH OF INGAAS BY THE MOCVD TECHNOLOGY FOR USE AS A 2.1 M PHOTODETECTOR. THE MOCVD GROWTH PROCESS MAKES POSSIBLE 1-STEP SYNTHESIS OF THE PHOTODIODE STRUCTURE, AND THEREFORE HOLDS THE PROMISE OF LEADING TO LOW-COST, HIGH PERFORMANCE PHOTODIODES WITH A 2.1 M SPECTRAL PEAK. THE PROPOSED WORK IS COMPATIBLE WITH PRESENT, IN-HOUSE PROGRAMS FOR GROWING INP BASED MATERIALS.

* information listed above is at the time of submission.

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