CHEMICAL VAPOR DEPOSITION AND ION BEAM MODIFICATION OF THERMOELECTRIC MATERIALS

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 10648
Amount: $49,777.00
Phase: Phase I
Program: SBIR
Awards Year: 1989
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Spire Corp
Patriots Pk, Bedford, MA, 01730
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Christopher J Keavney
 Principal Investigator
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE EFFICIENCIES OF THERMOELECTRIC DEVICES ARE GENERALLY LIMITED BY THE PROPERTIES OF THE AVAILABLE MATERIALS. THE RESEARCHERS PROPOSE TO USE ION BEAM MODIFICATION TO PRODUCE IMPROVED THERMOELECTRIC MATERIALS. BY INTRODUCING DEFECTS AND/OR ALLOYING ELEMENTS BY ION IMPLANTATION, THEY WILL ATTEMPT TO LOWER THE THERMAL CONDUCTIVITY OF THE MATERIALS WITHOUT REDUCING THE SEEBECK COEFFICIENT OR THE ELECTRICAL CONDUCTIVITY, THUS RESULTING IN A HIGHER FIGURE OF MERIT AND MAKING POSSIBLE A HIGHER EFFICIENCY IN THERMOELECTRIC GENERATORS, COOLERS, ETC. IN PHASE I THEY WILL DEPOSIT SI-GE ALLOYS IN THIN FILM FORM, DOPE THEM BY ION IMPLANTATION, AND MEASURE THE RELEVANT ELECTRICAL PROPERTIES.

* information listed above is at the time of submission.

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government