CHEMICAL VAPOR DEPOSITION AND ION BEAM MODIFICATION OF THERMOELECTRIC MATERIALS

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$49,777.00
Award Year:
1989
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Award Id:
10648
Agency Tracking Number:
10648
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Patriots Pk, Bedford, MA, 01730
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Christopher J Keavney
Principal Investigator
(617) 275-6000
Business Contact:
() -
Research Institution:
n/a
Abstract
THE EFFICIENCIES OF THERMOELECTRIC DEVICES ARE GENERALLY LIMITED BY THE PROPERTIES OF THE AVAILABLE MATERIALS. THE RESEARCHERS PROPOSE TO USE ION BEAM MODIFICATION TO PRODUCE IMPROVED THERMOELECTRIC MATERIALS. BY INTRODUCING DEFECTS AND/OR ALLOYING ELEMENTS BY ION IMPLANTATION, THEY WILL ATTEMPT TO LOWER THE THERMAL CONDUCTIVITY OF THE MATERIALS WITHOUT REDUCING THE SEEBECK COEFFICIENT OR THE ELECTRICAL CONDUCTIVITY, THUS RESULTING IN A HIGHER FIGURE OF MERIT AND MAKING POSSIBLE A HIGHER EFFICIENCY IN THERMOELECTRIC GENERATORS, COOLERS, ETC. IN PHASE I THEY WILL DEPOSIT SI-GE ALLOYS IN THIN FILM FORM, DOPE THEM BY ION IMPLANTATION, AND MEASURE THE RELEVANT ELECTRICAL PROPERTIES.

* information listed above is at the time of submission.

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