DEVELOPMENT OF HIGH-IN-CONTENT PSEUDOMORPHIC HEMTS FOR HIGH PERFORMANCE RF COMMUNICATIONS DEVICES

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: N/A
Agency Tracking Number: 12112
Amount: $492,644.00
Phase: Phase II
Program: SBIR
Awards Year: 1991
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Spire Corp.
Patriots Park, Bedford, MA, 01730
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Kurt J. Linden
 Manager, Electronic Materials
 (617) 275-6000
Business Contact
 RICHARD S. GREGORIO
Title: TREASURER
Phone: (617) 275-6000
Research Institution
N/A
Abstract
THERE EXISTS AN ONGOING DEMAND FOR HIGH-PERFORMANCE TRANSISTORS IN THE FIELD OF SATELLITE COMMUNICATIONS. THIS PROPOSAL FOCUSES ON HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) USEFUL IN A VARIETY OF MICROWAVE APPLICATIONS; SPECIFICALLY, SPIRE PROPOSES TO DEVELOP THE GROWTH OF HIGH INDIUM-CONTENT PSEUDOMORPHIC HEMTS BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). BY INCREASING THE AMOUNT OF INDIUM PRESENT IN THE TWO-DIMENSIONAL ELECTRON GAS (2DEG) CHANNEL, SIGNIFICANT GAINS MAY BE REALIZED IN TERMS OF ELECTRON PEAK VELOCITY, ELECTRON MOBILITY, REDUCTION OF TRAP-RELATED GENERATION/RECOMBINATION NOISE, AND LOWER OUTPUT CONDUCTANCE. THESE ACCOMPLISHMENTS WILL RESULT ULTIMATELY IN A SUPERIOR HIGH-SPEED DEVICE, WHICH WILL BENEFIT BOTH THE GOVERNMENT AND THE PRIVATE SECTOR.

* information listed above is at the time of submission.

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