DEVELOPMENT OF HIGH-IN-CONTENT PSEUDOMORPHIC HEMTS FOR HIGH PERFORMANCE RF COMMUNICATIONS DEVICES

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$492,644.00
Award Year:
1991
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
12112
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Spire Corp.
Patriots Park, Bedford, MA, 01730
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Kurt J. Linden
Manager, Electronic Materials
(617) 275-6000
Business Contact:
RICHARD S. GREGORIO
TREASURER
(617) 275-6000
Research Institution:
n/a
Abstract
THERE EXISTS AN ONGOING DEMAND FOR HIGH-PERFORMANCE TRANSISTORS IN THE FIELD OF SATELLITE COMMUNICATIONS. THIS PROPOSAL FOCUSES ON HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) USEFUL IN A VARIETY OF MICROWAVE APPLICATIONS; SPECIFICALLY, SPIRE PROPOSES TO DEVELOP THE GROWTH OF HIGH INDIUM-CONTENT PSEUDOMORPHIC HEMTS BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). BY INCREASING THE AMOUNT OF INDIUM PRESENT IN THE TWO-DIMENSIONAL ELECTRON GAS (2DEG) CHANNEL, SIGNIFICANT GAINS MAY BE REALIZED IN TERMS OF ELECTRON PEAK VELOCITY, ELECTRON MOBILITY, REDUCTION OF TRAP-RELATED GENERATION/RECOMBINATION NOISE, AND LOWER OUTPUT CONDUCTANCE. THESE ACCOMPLISHMENTS WILL RESULT ULTIMATELY IN A SUPERIOR HIGH-SPEED DEVICE, WHICH WILL BENEFIT BOTH THE GOVERNMENT AND THE PRIVATE SECTOR.

* information listed above is at the time of submission.

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