MOCVD OF LEAD-GERMANATE FOR FERROELECTRIC NON-VOLATILE RAMS

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 12999
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1990
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Spire Corp
Patriots Pk, Bedford, MA, 01730
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Dr Anton C Greenwald
 (617) 275-6000
Business Contact
Phone: () -
Research Institution
N/A
Abstract
NON-VOLATILE RANDOM ACCESS MEMORIES (NVRAM) OF 256 AND 512 BITS BASED ON THE FERROELECTRIC MATERIAL PB(ZR, TI)O3 ARE NOW BEING INTRODUCED INTO THE MARKET. LARGER MEMORIES, OF INTEREST TO THE MILITARY, REQUIRE IMPROVEMENTS IN THE BASIC MATERIAL. THE PROPERTIES OF BULK LEAD-GERMANATE SUGGEST GREAT POTENTIAL FOR THIS APPLICATION, HOWEVER THE PROPERTIES OF THIN FILMS FABRICATED FROM IT TO DATE HAVE NOT BEEN AS GOOD AS THOSE OF OTHER COMPOUNDS. PHASE I OF THE PROPOSED RESEARCH WILL INVESTIGATE CHEMICAL VAPOR DEPOSITON (CVD) AS A MEANS OF DEPOSITING LEAD GERMANATE FILMS OF EXCEPTIONAL PURITY, WITH IMPROVED UNIFORMITY IN COMPOSITION, STRUCTURE, AND THICKNESS. PRELIMINARY MEASUREMENTS OF ELECTRIC PROPERTIES WILL BE MADE. PHASE II OF THE PROPOSED RESEARCH WOULD STUDY MATERIAL INTERACTIONS WITH ELECTRODES AND OPTIMIZE THE ELECTRICAL PROPERTIES OF CVD FILMS.

* information listed above is at the time of submission.

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